IDC04S60C edited by infin eon technologies, aim pmd d cid cls , edition 1 , 05 . 04 .200 6 2 nd generation thinq! tm sic schottky diode applications: smps, pfc, snubber features: revolutionary semiconductor material - silicon carbide switching behavior benchmark no reverse recovery no temperature influence on the switching behavior no forward recovery high surge current capability a c chip type v br i f die size package IDC04S60C 600v 4a 1.146 x 0.968 mm 2 sawn on foil mechanical parameter: raster size 1.146 x 0 . 968 anode pad size 0 . 909 x 0 . 731 mm area total / active 1.11 / 0.74 mm 2 thickness 355 m wafer size 75 mm flat position 0 deg max. possible chips per wafer 3461 pcs passivation frontside photoimide anode metalization 3200 nm al cathode metalization 1400 nm ni ag ? system suitable for e poxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, 350m reject ink dot size ? 3 0.3 mm recommended storage environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 2 3c
IDC04S60C edited by infin eon technologies, aim pmd d cid cls , edition 1 , 05 . 04 .200 6 maximum ratings parameter symbol condition value unit repetitive peak reverse voltage v rrm 600 dc blocking voltage v dc 600 v continuous forward current limited by t jmax i f 4 surge non repetitive forward current sine halfwave i f,sm t c =25 c, t p =10 ms 32 r epetitive peak forward current limited by t jmax i f,rm t c = 1 0 0 c , t j =150 c, d=0.1 18 non - repetitive peak forward current i f,max t c =25 c, tp=10s 132 a operating junction and storage temperature t j , t stg - 55...+175 c static e lectrical characteristics (tested on chip), t j =25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit reverse current i r v r =600v t j =25 c 0.5 5 0 a diode forward voltage v f i f = 4 a t j =25 c 1.7 1.9 v dynamic electrical characteristics , at t j = 25 c, unless otherwise specified, tested at component value parameter symbol conditions min. typ. max. unit total capacitive charge q c t j = 150 c 8 nc switching time 1) t c i f <=i f,max di/dt=200a/ m s v r =400v t j = 150 c <10 ns v r = 1 v 130 v r =30 0v 20 total capacitance c f=1mhz v r =6 00v 20 pf 1) t c is the time constant for the capacitive displacement current waveform (independent from t j , i load and di/dt), different from t rr which is dependent on t j , i load and di/dt. no reverse recovery time constant t rr due to absence of minority carrier injection
IDC04S60C edited by infin eon technologies, aim pmd d cid cls , edition 1 , 05 . 04 .200 6 chip drawing:
IDC04S60C edited by infin eon technologies, aim pmd d cid cls , edition 1 , 05 . 04 .200 6 further electrical characteristics: this chip data sheet refers to the device data sheet infineon technologies idt0 4 s60c description: aql 0,65 for visual inspection according to failure catalog electrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2000 all rights reserved attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby dis claim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology , delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see address list). warnings due to technical requirements components may contain dangero us substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologie s, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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